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Antenna effect in 65nm NMOS devices with 9.5nm thick HfOx gate dielectric
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Authors
Hiblot, Gaspard
;
O'Sullivan, Barry
;
Ronchi, Nicolo
;
Banerjee, Kaustuv
DOI
10.1109/IIRW53245.2021.9635612
EISBN
978-1-6654-1794-5
ISSN
1930-8841
Conference
IEEE International Integrated Reliability Workshop (IIRW) / 4th Reliability Experts Forum
Journal
na
Title
Antenna effect in 65nm NMOS devices with 9.5nm thick HfOx gate dielectric
Publication type
Proceedings paper
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Conference contributions
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3
20.500.12860/39513.3
*
2022-03-31T12:08:09Z
validation by library/open access desk
2
20.500.12860/39513.2
2022-03-29T06:36:55Z
validation by imec author
1
20.500.12860/39513
2022-03-25T02:07:41Z
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