Browsing by author "Ronchi, Nicolo"

A comprehensive variability study of doped HfO2 FeFET for memory applications

Ronchi, Nicolo; Ragnarsson, Lars-Ake; Celano, Umberto; Kaczer, Ben; Kaczmarek, Jakub; Banerjee, Kaustuv; McMitchell, Sean; Van den Bosch, Geert; Van Houdt, Jan (2022)

A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs

Chen, Zhuo; Ronchi, Nicolo; Tang, Hongwei; Walke, Amey; Izmailov, Roman; Popovici, Mihaela Ioana; van den Bosch, Geert; Rosmeulen, Maarten; Afanasiev, Valeri; Van Houdt, Jan (2024)

AlGaN/GaN power Schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate

Lenci, Silvia; Hu, Jie; Ronchi, Nicolo; Decoutere, Stefaan (2016)

An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology

Posthuma, Niels; You, Shuzhen; Stoffels, Steve; Wellekens, Dirk; Liang, Hu; Zhao, Ming; De Jaeger, Brice; Geens, Karen; Ronchi, Nicolo; Decoutere, Stefaan; Moens, Peter; Banerjee, Abhishek; Ziad, Hocine; Tack, Marnix (2018)

Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: experimental data and numerical simulation

Marino, F.A.; Bisi, D.; Meneghini, M.; Verzellesi, G.; Zanoni, E.; Van Hove, Marleen; You, Shuzhen; Decoutere, Stefaan; Marcon, Denis; Stoffels, Steve; Ronchi, Nicolo; Meneghesso, G. (2015)

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Wu, Tian-Li; Marcon, Denis; Ronchi, Nicolo; Bakeroot, Benoit; You, Shuzhen; Stoffels, Steve; Van Hove, Marleen; Bisi, Davide; Meneghini, Matteo; Groeseneken, Guido; Decoutere, Stefaan (2015)

Analysis of the gate capacitance-voltage characteristics in p-GaN/AlGaN/GaN heterostructures

Wu, Tian-Li; Bakeroot, Benoit; Liang, Hu; Posthuma, Niels; You, Shuzhen; Ronchi, Nicolo; Stoffels, Steve; Marcon, Denis; Decoutere, Stefaan (2017)

Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors

Lee, Sumi; Ronchi, Nicolo; Bizindavyi, Jasper; Popovici, Mihaela Ioana; Banerjee, Kaustuv; Walke, Amey; Delhougne, Romain; Van Houdt, Jan; Shin, Changhwan (2023)

Antenna effect in 65nm NMOS devices with 9.5nm thick HfOx gate dielectric

Hiblot, Gaspard; O'Sullivan, Barry; Ronchi, Nicolo; Banerjee, Kaustuv (2021)

Breakdown investigation in GaN-based MIS-HEMT devices

Marino, Fabio; Bisi, Davide; Meneghini, Matteo; Verzellesi, Giovanni; Zanoni, Enrico; Van Hove, Marleen; You, Shuzhen; Decoutere, Stefaan; Marcon, Denis; Stoffels, Steve; Ronchi, Nicolo; Meneghesso, Gaudio (2014)

Combined PEALD gate-dielectric and in-situ SiN cap-layer for reduced Vth shift and RDS-ON dispersion of AlGaN/GaN HEMTs on 200 mm Si wafer

Ronchi, Nicolo; De Jaeger, Brice; Van Hove, Marleen; Roelofs, Robin; Wu, Tian-Li; Hu, Jie; Kang, Xuanwu; Decoutere, Stefaan (2014)

Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN

Ronchi, Nicolo; De Jaeger, Brice; Van Hove, Marleen; Roelofs, Robin; Wu, Tian-Li; Hu, Jie; Kang, Xuanwu; Decoutere, Stefaan (2015)

Comparison of AlGaN/GaN MISHEMT powerbar designs

Stoffels, Steve; Ronchi, Nicolo; Venegas, Rafael; De Jaeger, Brice; Marcon, Denis; Decoutere, Stefaan (2014-02)

Comparison of AlGaN/GaN MISHEMT powerbar designs

Stoffels, Steve; Ronchi, Nicolo; Venegas, Rafael; De Jaeger, Brice; Marcon, Denis; Decoutere, Stefaan (2013-08)

Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory

Chang, Ting-Yu; Wang, Kuan-Chi; Liu, Hsien-Yang; Hseun, Jing-Hua; Peng, Wei-Cheng; Ronchi, Nicolo; Celano, Umberto; Banerjee, Kaustuv; Van Houdt, Jan; Wu, Tian-Li (2023)

Defect profiling in FEFET Si:HfO2 layers

O'Sullivan, Barry; Putcha, Vamsi; Izmailov, Roman; Afanas'ev, Valeri V.; Simoen, Eddy; Jung, Taehwan; Higashi, Yusuke; Degraeve, Robin; Truijen, Brecht; Kaczer, Ben; Ronchi, Nicolo; McMitchell, Sean; Banerjee, Kaustuv; Clima, Sergiu; Breuil, Laurent; Van den Bosch, Geert; Linten, Dimitri; Van Houdt, Jan (2020)

Demonstration of 64 Conductance States and Large Dynamic Range in Sidoped HfO2 FeFETs under Neuromorphic Computing Operations

Wang, Yu-Yun; Wang, Kuang-Chi; Wu, Cheng-Hung; Chang, Ting-Yu; Ronchi, Nicolo; Banerjee, Kaustuv; Van den Bosch, Geert; Van Houdt, Jan; Wu, Tian-Li (2022-04-18)