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dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClarysse, Trudo
dc.contributor.authorDe Wolf, Peter
dc.contributor.authorEyben, Pierre
dc.contributor.authorHaegeman, Bart
dc.contributor.authorXu, Mingwei
dc.contributor.authorTrenkler, Thomas
dc.contributor.authorHantschel, Thomas
dc.contributor.authorStephenson, Robert
dc.date.accessioned2021-10-14T11:50:34Z
dc.date.available2021-10-14T11:50:34Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3960
dc.sourceIIOimport
dc.titleNanometer scale characterization of deep submicron devices
dc.typeOral presentation
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.source.peerreviewno
dc.source.conferenceMaterials Research Society Spring Meeting: Symposium S on Si Front-End Processing - Physics and Technology of Dopant-Defect Inte
dc.source.conferencelocation
imec.availabilityPublished - imec


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