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Ab-intio based electron-phonon scattering for 2D materials within the NEGF framework

dc.contributor.authorGaddemane, Gautam
dc.contributor.authorDuflou, Rutger
dc.contributor.authorSankaran, Kiroubanand
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorHoussa, Michel
dc.contributor.authorAfzalian, Aryan
dc.date.accessioned2022-05-02T09:21:11Z
dc.date.available2022-05-02T09:21:11Z
dc.date.issued2021
dc.identifier.issn1946-1569
dc.identifier.otherWOS:000766985400040
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39725
dc.sourceWOS
dc.titleAb-intio based electron-phonon scattering for 2D materials within the NEGF framework
dc.typeProceedings paper
dc.contributor.imecauthorGaddemane, Gautam
dc.contributor.imecauthorDuflou, Rutger
dc.contributor.imecauthorSankaran, Kiroubanand
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorAfzalian, Aryan
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDuflou, Rutger::0000-0002-0357-1293
dc.contributor.orcidimecSankaran, Kiroubanand::0000-0001-6988-7269
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecAfzalian, Aryan::0000-0002-5260-0281
dc.identifier.doi10.1109/SISPAD54002.2021.9592532
dc.identifier.eisbn978-1-6654-0685-7
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.beginpage167
dc.source.endpage170
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
dc.source.conferencedateSEP 27-29, 2021
dc.source.conferencelocationDallas
dc.source.journalna
imec.availabilityPublished - imec


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