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Random band-edge model description of thermoelectricity in high-mobility disordered semiconductors: Application to the amorphous oxide In-Ga-Zn-O
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Random band-edge model description of thermoelectricity in high-mobility disordered semiconductors: Application to the amorphous oxide In-Ga-Zn-O
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Date
2022
Journal article
https://doi.org/10.1103/physrevb.105.245201
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Fishchuk, Ivan I.
;
Kadashchuk, Andriy
;
Rolin, Cedric
;
Baessler, Heinz
;
Koehler, Anna
;
Heremans, Paul
;
Genoe, Jan
Journal
PHYSICAL REVIEW B
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since deposited on 2022-07-21
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Downloads
375
since deposited on 2022-07-21
24
last month
9
last week
Acq. date: 2026-07-27
Views
1672
since deposited on 2022-07-21
Acq. date: 2026-07-27
Citations