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Random band-edge model description of thermoelectricity in high-mobility disordered semiconductors: Application to the amorphous oxide In-Ga-Zn-O
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411 since deposited on 2022-07-21
46last month
8last week
Acq. date: 2026-08-20
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1673 since deposited on 2022-07-21
1last month
1last week
Acq. date: 2026-08-20
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