Improved resolution with main chain scission resists for EUV lithography

Abstract

In this work, imec and Zeon introduce the resist with new concept and report the lithography performance. Zeon has developed a new resist (ZER02#05M) in order to improve both resolution and lithography performance because conventional Zeon resists generated worse resolution and kissing(C/H)/pinching(L/S) defects at tight pitch by top loss. The lithography performance at hexagonal contact hole (C/H) patterns with ZER02#05M is presented at ADI. For P40nm hexagonal C/H pattern in ADI by new resist, the lithography performance at CD17.5 nm in hole CD was achieved at the exposure dose of 92 mJ/cm(2), giving a LCDU of 2.74 nm. It at CD18nm in P38nm hexagonal C/H pattern was resolved at 105 mJ/cm(2), with a LCDU of 2.95 nm. t at CD18nm it at CD 17nm in P36nm hexagonal C/H pattern was resolved at 92 mJ/cm(2), with a LCDU of 4.12 nm. Entire results with ZER02#05M could improve LCDU compared to ZER02#04DM, especially at larger CD. Additionally, patterning performance in AEI with 05 which did not optimize polymer properties could transfer patterns well and enhance LCDU compared to ZER02#04DM.