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Analysis of tunneling currents and reliability of NMOSFET's with sub-2 nm gate oxides

dc.contributor.authorYang, N.
dc.contributor.authorHenson, W. K.
dc.contributor.authorWortman, J. J.
dc.date.accessioned2021-10-14T11:59:22Z
dc.date.available2021-10-14T11:59:22Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4042
dc.sourceIIOimport
dc.titleAnalysis of tunneling currents and reliability of NMOSFET's with sub-2 nm gate oxides
dc.typeProceedings paper
dc.source.peerreviewno
dc.source.beginpage453
dc.source.endpage456
dc.source.conferenceInternational Electron Devices Meeting. Technical digest; December 1999; Washington, D.C.
dc.source.conferencelocation
imec.availabilityPublished - imec


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