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The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
dc.contributor.author | Millesimo, M. | |
dc.contributor.author | Borga, M. | |
dc.contributor.author | Bakeroot, B. | |
dc.contributor.author | Posthuma, N. | |
dc.contributor.author | Decoutere, S. | |
dc.contributor.author | Sangiorgi, E. | |
dc.contributor.author | Fiegna, C. | |
dc.contributor.author | Tallarico, A. N. | |
dc.date.accessioned | 2022-11-14T03:02:34Z | |
dc.date.available | 2022-11-14T03:02:34Z | |
dc.date.issued | 2022-NOV | |
dc.identifier.issn | 0741-3106 | |
dc.identifier.other | WOS:000876041700017 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/40730 | |
dc.source | WOS | |
dc.title | The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs | |
dc.type | Journal article | |
dc.contributor.imecauthor | Borga, M. | |
dc.contributor.imecauthor | Bakeroot, B. | |
dc.contributor.imecauthor | Posthuma, N. | |
dc.contributor.imecauthor | Decoutere, S. | |
dc.identifier.doi | 10.1109/LED.2022.3206610 | |
dc.source.numberofpages | 4 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 1846 | |
dc.source.endpage | 1849 | |
dc.source.journal | IEEE ELECTRON DEVICE LETTERS | |
dc.source.issue | 11 | |
dc.source.volume | 43 | |
imec.availability | Under review |
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