Notice

This item has not yet been validated by imec staff.

Notice

This is not the latest version of this item. The latest version can be found at: https://imec-publications.be/handle/20.500.12860/41070.2

Show simple item record

Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer

dc.contributor.authorAlian, Alireza
dc.contributor.authorRodriguez, Raul
dc.contributor.authorYadav, Sachin
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorHernandez, Arturo Sibaja
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorZhao, Ming
dc.contributor.authorElKashlan, Rana
dc.contributor.authorVermeersch, Bjorn
dc.contributor.authorYu, Hao
dc.contributor.authorBury, Erik
dc.contributor.authorKhaled, Ahmad
dc.contributor.authorCollaert, Nadine
dc.contributor.authorParvais, Bertrand
dc.date.accessioned2023-02-09T03:20:55Z
dc.date.available2023-02-09T03:20:55Z
dc.date.issued2022
dc.identifier.issn1930-8876
dc.identifier.otherWOS:000904209900042
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41070
dc.sourceWOS
dc.titleImpact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
dc.typeProceedings paper
dc.contributor.imecauthorAlian, Alireza
dc.contributor.imecauthorRodriguez, Raul
dc.contributor.imecauthorYadav, Sachin
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorHernandez, Arturo Sibaja
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorElKashlan, Rana
dc.contributor.imecauthorVermeersch, Bjorn
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorKhaled, Ahmad
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.contributor.orcidimecRodriguez, Raul::0000-0002-4457-8942
dc.contributor.orcidimecYadav, Sachin::0000-0003-4530-2603
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecVermeersch, Bjorn::0000-0001-8640-672X
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecKhaled, Ahmad::0000-0003-2892-3176
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.identifier.doi10.1109/ESSDERC55479.2022.9947147
dc.identifier.eisbn978-1-6654-8497-8
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.beginpage384
dc.source.endpage387
dc.source.conference52nd IEEE European Solid-State Device Research Conference (ESSDERC)
dc.source.conferencedateSEP 19-22, 2022
dc.source.conferencelocationMilan
imec.availabilityUnder review


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record

Version history

VersionItemDateSummary
220.500.12860/41070.22023-04-12T10:08:18Zvalidation by library/open access desk
120.500.12860/41070*2023-02-09T03:20:55Z

*Selected version