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Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
dc.contributor.author | Alian, Alireza | |
dc.contributor.author | Rodriguez, Raul | |
dc.contributor.author | Yadav, Sachin | |
dc.contributor.author | Peralagu, Uthayasankaran | |
dc.contributor.author | Hernandez, Arturo Sibaja | |
dc.contributor.author | Putcha, Vamsi | |
dc.contributor.author | Zhao, Ming | |
dc.contributor.author | ElKashlan, Rana | |
dc.contributor.author | Vermeersch, Bjorn | |
dc.contributor.author | Yu, Hao | |
dc.contributor.author | Bury, Erik | |
dc.contributor.author | Khaled, Ahmad | |
dc.contributor.author | Collaert, Nadine | |
dc.contributor.author | Parvais, Bertrand | |
dc.date.accessioned | 2023-02-09T03:20:55Z | |
dc.date.available | 2023-02-09T03:20:55Z | |
dc.date.issued | 2022 | |
dc.identifier.issn | 1930-8876 | |
dc.identifier.other | WOS:000904209900042 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/41070 | |
dc.source | WOS | |
dc.title | Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Alian, Alireza | |
dc.contributor.imecauthor | Rodriguez, Raul | |
dc.contributor.imecauthor | Yadav, Sachin | |
dc.contributor.imecauthor | Peralagu, Uthayasankaran | |
dc.contributor.imecauthor | Hernandez, Arturo Sibaja | |
dc.contributor.imecauthor | Putcha, Vamsi | |
dc.contributor.imecauthor | Zhao, Ming | |
dc.contributor.imecauthor | ElKashlan, Rana | |
dc.contributor.imecauthor | Vermeersch, Bjorn | |
dc.contributor.imecauthor | Yu, Hao | |
dc.contributor.imecauthor | Bury, Erik | |
dc.contributor.imecauthor | Khaled, Ahmad | |
dc.contributor.imecauthor | Collaert, Nadine | |
dc.contributor.imecauthor | Parvais, Bertrand | |
dc.contributor.orcidimec | Alian, AliReza::0000-0003-3463-416X | |
dc.contributor.orcidimec | Rodriguez, Raul::0000-0002-4457-8942 | |
dc.contributor.orcidimec | Yadav, Sachin::0000-0003-4530-2603 | |
dc.contributor.orcidimec | Peralagu, Uthayasankaran::0000-0001-9166-4408 | |
dc.contributor.orcidimec | Putcha, Vamsi::0000-0003-1907-5486 | |
dc.contributor.orcidimec | Zhao, Ming::0000-0002-0856-851X | |
dc.contributor.orcidimec | Vermeersch, Bjorn::0000-0001-8640-672X | |
dc.contributor.orcidimec | Yu, Hao::0000-0002-1976-0259 | |
dc.contributor.orcidimec | Bury, Erik::0000-0002-5847-3949 | |
dc.contributor.orcidimec | Khaled, Ahmad::0000-0003-2892-3176 | |
dc.contributor.orcidimec | Collaert, Nadine::0000-0002-8062-3165 | |
dc.contributor.orcidimec | Parvais, Bertrand::0000-0003-0769-7069 | |
dc.identifier.doi | 10.1109/ESSDERC55479.2022.9947147 | |
dc.identifier.eisbn | 978-1-6654-8497-8 | |
dc.source.numberofpages | 4 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 384 | |
dc.source.endpage | 387 | |
dc.source.conference | 52nd IEEE European Solid-State Device Research Conference (ESSDERC) | |
dc.source.conferencedate | SEP 19-22, 2022 | |
dc.source.conferencelocation | Milan | |
imec.availability | Under review |
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