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Point defect reactions in silicon studied by in-situ high flux electron irradiation in a high voltage transmission electron microscope

dc.contributor.authorVanhellemont, Jan
dc.contributor.authorRomano, Albert
dc.contributor.authorFedina, L.
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorAseev, A.
dc.date.accessioned2021-09-29T12:51:23Z
dc.date.available2021-09-29T12:51:23Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/427
dc.sourceIIOimport
dc.titlePoint defect reactions in silicon studied by in-situ high flux electron irradiation in a high voltage transmission electron microscope
dc.typeOral presentation
dc.source.peerreviewno
dc.source.conference1st International Conference on Materials for Microelectronics
dc.source.conferencedate17/10/1994
dc.source.conferencelocationBarcelona Spain
imec.availabilityPublished - imec


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