Point defect reactions in silicon studied by in-situ high flux electron irradiation in a high voltage transmission electron microscope
dc.contributor.author | Vanhellemont, Jan | |
dc.contributor.author | Romano, Albert | |
dc.contributor.author | Fedina, L. | |
dc.contributor.author | Van Landuyt, J. | |
dc.contributor.author | Aseev, A. | |
dc.date.accessioned | 2021-09-29T12:51:23Z | |
dc.date.available | 2021-09-29T12:51:23Z | |
dc.date.issued | 1994 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/427 | |
dc.source | IIOimport | |
dc.title | Point defect reactions in silicon studied by in-situ high flux electron irradiation in a high voltage transmission electron microscope | |
dc.type | Oral presentation | |
dc.source.peerreview | no | |
dc.source.conference | 1st International Conference on Materials for Microelectronics | |
dc.source.conferencedate | 17/10/1994 | |
dc.source.conferencelocation | Barcelona Spain | |
imec.availability | Published - imec |
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