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Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors
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Authors
Rai, Narendra
;
Sarkar, Ritam
;
Mahajan, Ashutosh
;
Laha, Apurba
;
Saha, Dipankar
;
Ganguly, Swaroop
DOI
10.1063/5.0176944
ISSN
0021-8979
Issue
24
Journal
JOURNAL OF APPLIED PHYSICS
Volume
134
Title
Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors
Publication type
Journal article
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2
20.500.12860/43412.2
*
2024-03-28T08:43:18Z
validation by library/open access desk
1
20.500.12860/43412
2024-01-13T17:48:02Z
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