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Processing factors influencing the leakage current in shallow junction diodes for deep submicron CMOS

dc.contributor.authorGrau, Lluis
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRooyackers, Rita
dc.contributor.authorClaeys, Cor
dc.contributor.authorBadenes, Gonçal
dc.contributor.authorRomano-Rodriguez, A.
dc.date.accessioned2021-10-14T13:01:04Z
dc.date.available2021-10-14T13:01:04Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4401
dc.sourceIIOimport
dc.titleProcessing factors influencing the leakage current in shallow junction diodes for deep submicron CMOS
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage11
dc.source.endpage14
dc.source.conference3rd International Conference Materials for Microelectronics
dc.source.conferencedate16/10/2000
dc.source.conferencelocationDublin Ireland
imec.availabilityPublished - open access


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