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Process optimization and integration of trimethylsilane deposited a-SiC:H and SiOC:H dielectric thin films for damascene processing

dc.contributor.authorGray, William
dc.contributor.authorLoboda, M.
dc.contributor.authorStruyf, Herbert
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDonaton, R. A.
dc.contributor.authorSleeckx, Erik
dc.contributor.authorStucchi, Michele
dc.contributor.authorGao, Teng
dc.contributor.authorBoullart, Werner
dc.contributor.authorCoenegrachts, Bart
dc.contributor.authorMaenhoudt, Mireille
dc.contributor.authorVanhaelemeersch, Serge
dc.contributor.authorMeynen, Herman
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-14T13:01:12Z
dc.date.available2021-10-14T13:01:12Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4402
dc.sourceIIOimport
dc.titleProcess optimization and integration of trimethylsilane deposited a-SiC:H and SiOC:H dielectric thin films for damascene processing
dc.typeOral presentation
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorSleeckx, Erik
dc.contributor.imecauthorStucchi, Michele
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorCoenegrachts, Bart
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecSleeckx, Erik::0000-0003-2560-6132
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.source.peerreviewno
dc.source.conferenceMRS Spring Meeting 2000. Symposium D: Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics; 2
dc.source.conferencelocation
imec.availabilityPublished - imec


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