Improving OPC Model Accuracy of Dry Resist for Low k1 EUV Patterning

Abstract

Extreme ultraviolet lithography (EUVL) with a numerical aperture of 0.33 has been part of high-volume manufacturing since 2019. To guarantee the downscaling of the technology node, advanced material and patterning becomes very critical in terms of resolution, roughness, defectivity and process window. Therefore, several entities are developing new resists and processes. However, to adopt new resist and process into production, performing model-based optical proximity correct (OPC) is an essential step. Thus, an accurate OPC model is required. In this paper, we investigate the Siemens calibre CM1 OPC model accuracy of dry resist process, which is conducted on N5 M2 design (horizontal pitch 32nm).