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Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance
Publication:
Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance
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Date
2024
Proceedings Paper
https://doi.org/10.1109/IRPS48228.2024.10529409
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Higashi, Yusuke
;
Bastos, Joao
;
Vaisman Chasin, Adrian
;
Breuil, Laurent
;
Arreghini, Antonio
;
Ramesh, Siva
;
Rachidi, Sana
;
Jeong, Yongbin
;
Van den Bosch, Geert
;
Rosmeulen, Maarten
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425
since deposited on 2024-08-16
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last month
Acq. date: 2026-01-09
Citations
Metrics
Views
425
since deposited on 2024-08-16
2
last month
Acq. date: 2026-01-09
Citations