Transfer of a high temperature LPCVD-SiN photonic layer on wafers with thermal budget limitations

Abstract

This paper demonstrates the transfer of a LPCVD-SiN photonic layer to another wafer. In most cases the layer is transferred to a receiver wafer that has a limitation in thermal budget. The LPCVD-SiN layer cannot be directly integrated on receiver substrates such as CMOS or glass because of high deposition temperature but it can be transferred from Si carrier by bonding. Here it is demonstrated for two types of wafers (CMOS and glass) with a state-of-the-art propagation loss value for a 200mm LPCVD-SiN platform of 2.8dB/cm at 450nm.