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Measurement of hole transport in ultrathin SiGe layers and their application in 2D device simulations of heterojunction pMOSFETs

dc.contributor.authorLander, Rob
dc.contributor.authorPonomarev, Youri
dc.contributor.authorde Boer, W. B.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-14T13:13:55Z
dc.date.available2021-10-14T13:13:55Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4514
dc.sourceIIOimport
dc.titleMeasurement of hole transport in ultrathin SiGe layers and their application in 2D device simulations of heterojunction pMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage66
dc.source.endpage67
dc.source.conferenceExtended Abstracts of the International Conference on Solid State Devices and Materials; Sendai, Japan.
dc.source.conferencelocation
imec.availabilityPublished - imec


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