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Measurement of hole transport in ultrathin SiGe layers and their application in 2D device simulations of heterojunction pMOSFETs
Publication:
Measurement of hole transport in ultrathin SiGe layers and their application in 2D device simulations of heterojunction pMOSFETs
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Date
2000
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lander, Rob
;
Ponomarev, Youri
;
de Boer, W. B.
;
Loo, Roger
;
Caymax, Matty
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1897
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Acq. date: 2025-12-10
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Metrics
Views
1897
since deposited on 2021-10-14
2
last month
Acq. date: 2025-12-10
Citations