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Measurement of hole transport in ultrathin SiGe layers and their application in 2D device simulations of heterojunction pMOSFETs

Date

2000
Proceedings Paper
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dc.contributor.authorLander, Rob
dc.contributor.authorPonomarev, Youri
dc.contributor.authorde Boer, W. B.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-14T13:13:55Z
dc.date.available2021-10-14T13:13:55Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4514
dc.source.beginpage66
dc.source.conferenceExtended Abstracts of the International Conference on Solid State Devices and Materials; Sendai, Japan.
dc.source.conferencelocation
dc.source.endpage67
dc.title

Measurement of hole transport in ultrathin SiGe layers and their application in 2D device simulations of heterojunction pMOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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