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High Density 360 /μm Aligned CNT FET with ION>1 mA/μm at -0.5 V VD and 30nm Lch

dc.contributor.authorWu, Xiangyu
dc.contributor.authorTimmermans, Marina
dc.contributor.authorLiu, Lijun
dc.contributor.authorXi, Fengben
dc.contributor.authorSharma, Himanshu
dc.contributor.authorLin, Zaoyang
dc.contributor.authorCott, Daire
dc.contributor.authorMana, Luca
dc.contributor.authorNuytten, Thomas
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorHan, Han
dc.contributor.authorBrems, Steven
dc.contributor.authorGoux, Ludovic
dc.contributor.authorLockhart de la Rosa, Cesar Javier
dc.contributor.authorLin, Dennis
dc.contributor.authorKar, Gouri Sankar
dc.date.accessioned2025-04-10T15:29:27Z
dc.date.available2025-02-02T17:55:00Z
dc.date.available2025-04-10T15:29:27Z
dc.date.issued2024
dc.identifier.isbn979-8-3503-8814-5
dc.identifier.issn1930-8833
dc.identifier.otherWOS:001349548800035
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45159.2
dc.sourceWOS
dc.titleHigh Density 360 /μm Aligned CNT FET with ION>1 mA/μm at -0.5 V VD and 30nm Lch
dc.typeProceedings paper
dc.contributor.imecauthorWu, Xiangyu
dc.contributor.imecauthorLiu, Lijun
dc.contributor.imecauthorXi, Fengben
dc.contributor.imecauthorSharma, Himanshu
dc.contributor.imecauthorLin, Zaoyang
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorMana, Luca
dc.contributor.imecauthorNuytten, Thomas
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorHan, Han
dc.contributor.imecauthorBrems, Steven
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorTimmermans, Marina
dc.contributor.imecauthorLockhart de la Rosa, Cesar Javier
dc.contributor.orcidimecLiu, Lijun::0000-0002-3070-3204
dc.contributor.orcidimecXi, Fengben::0000-0002-1616-1525
dc.contributor.orcidimecSharma, Himanshu::0000-0002-1938-2489
dc.contributor.orcidimecCott, Daire::0009-0000-0890-8820
dc.contributor.orcidimecNuytten, Thomas::0000-0002-5921-6928
dc.contributor.orcidimecde Marneffe, Jean-Francois::0000-0001-5178-6670
dc.contributor.orcidimecHan, Han::0000-0003-2169-8332
dc.contributor.orcidimecBrems, Steven::0000-0002-0282-8528
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecLin, Dennis::0000-0002-1577-6050
dc.contributor.orcidimecWu, Xiangyu::0000-0002-6607-1819
dc.contributor.orcidimecMana, Luca::0009-0002-9791-4767
dc.contributor.orcidimecTimmermans, Marina::0000-0001-9805-8259
dc.contributor.orcidimecLockhart de la Rosa, Cesar Javier::0000-0002-1401-0141
dc.identifier.doi10.1109/ESSERC62670.2024.10719532
dc.identifier.eisbn979-8-3503-8813-8
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.beginpage133
dc.source.endpage136
dc.source.conference50th IEEE European Solid-State Electronics Research Conference (ESSERC)
dc.source.conferencedateSEP 09-12, 2024
dc.source.conferencelocationBruges
dc.source.journalN/A
imec.availabilityPublished - imec
dc.description.wosFundingTextThe authors gratefully acknowledge the contributions of the imec pilot-line, imec Xplore Lab, MCA and AMSIMEC characterization teams. The authors would like to acknowledge the imec Industrial Affiliation Program, Luis Pinotti, Ankit Mehta for their support. The authors would also like to thank the entire IMEC 2D project team for the discussions, in particular, Bavo Storms and Rudy Verheyen for their assistance. This research was funded by the imec IIAP core CMOS programs and from the European Union's Graphene Flagship grant agreement No. 952792. Lijun Liu acknowledges the fundings from FWO-Flanders.


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220.500.12860/45159.2*2025-04-10T15:23:04Zvalidation by library/open access desk
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