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The Ge/Pd/n-GaAs ohmic contact interface studied by backside Raman spectroscopy
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The Ge/Pd/n-GaAs ohmic contact interface studied by backside Raman spectroscopy
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Date
1994
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Watté, J.
;
Silverans, R. E.
;
Münder, H.
;
Palmstrøm, C. J.
;
Florez, L. T.
;
Van Hove, Marleen
;
Borghs, Gustaaf
;
Wuyts, Koen
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Acq. date: 2025-12-10
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Views
2288
since deposited on 2021-09-29
1
last month
Acq. date: 2025-12-10
Citations