Simulation and Experimental Demonstration of a Tolerant and Low-loss III-V-to-Si3N4 Adiabatic Coupling Structure

Abstract

A fabrication-tolerant and low-loss III-V-to-Si3N4 adiabatic coupling structure is designed and experimentally demonstrated. The simulation shows an excess loss less than -0.3-dB at +/-1-um lateral misalignment with the DVS-BCB bonding layer thickness varying from 10 to 70 nm. A micro-transfer printed III-V-to-Si3N4 coupler was measured to have a similar to -0.7 dB loss per coupler over a 1510 nm to 1610 nm wavelength range.