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Extraction of the silicon film thickness on fully depleted SOI nMOSFETs using the black gate influence

dc.contributor.authorNicolett, A. S.
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-14T13:28:01Z
dc.date.available2021-10-14T13:28:01Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4619
dc.sourceIIOimport
dc.titleExtraction of the silicon film thickness on fully depleted SOI nMOSFETs using the black gate influence
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage103
dc.source.endpage107
dc.source.conferenceProceedings of the XV SBmicro International Conference on Microelectronics and Packaging
dc.source.conferencedate18/09/2000
dc.source.conferencelocationManaus Brazil
imec.availabilityPublished - open access


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