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Write/erase degradation and disturb effects in source-side injection Flash EEPROM devices

dc.contributor.authorWellekens, Dirk
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorFaraone, Lorenzo
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-09-29T12:53:26Z
dc.date.available2021-09-29T12:53:26Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/461
dc.sourceIIOimport
dc.titleWrite/erase degradation and disturb effects in source-side injection Flash EEPROM devices
dc.typeProceedings paper
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage147
dc.source.endpage153
dc.source.conferenceProceedings of the 5th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF
dc.source.conferencedate4/10/1994
dc.source.conferencelocationGlasgow UK
imec.availabilityPublished - open access


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