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A new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs at 300K

dc.contributor.authorNicolett, A. S.
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.date.accessioned2021-10-14T13:28:17Z
dc.date.available2021-10-14T13:28:17Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4621
dc.sourceIIOimport
dc.titleA new method to extract the silicon film thickness of enhancement mode fully depleted SOI nMOSFETs at 300K
dc.typeOral presentation
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conference1st Latin American Test Workshop; March 2000; Rio de Janeiro, Brasil.
dc.source.conferencelocation
imec.availabilityPublished - imec


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