Show simple item record

Radiation damage of n-MOSFETs fabricated in a BiCMOS process

dc.contributor.authorOhyama, Hidenori
dc.contributor.authorKobayashi, K.
dc.contributor.authorNakabayashi, M.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorTakami, Y.
dc.contributor.authorYoneoka, M.
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorTakizawa, H.
dc.contributor.authorKohiki, S.
dc.date.accessioned2021-10-14T13:30:23Z
dc.date.available2021-10-14T13:30:23Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4635
dc.sourceIIOimport
dc.titleRadiation damage of n-MOSFETs fabricated in a BiCMOS process
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage107
dc.source.endpage110
dc.source.conference3rd International Conference Materials for Microelectronics
dc.source.conferencedate16/10/2000
dc.source.conferencelocationDublin Ireland
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
4632.pdf
Size:
316.9Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record