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High-energy boron-implantation and proton-irradiation effects in diodes with shallow trench isolation

dc.contributor.authorPoyai, Amporn
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorHayama, Kiyoteru
dc.contributor.authorKobayashi, K.
dc.contributor.authorOhyama, Hidenori
dc.contributor.authorTakizawa, H.
dc.contributor.authorKokkoris, M.
dc.contributor.authorKossionides, E.
dc.contributor.authorFanourakis, G.
dc.contributor.authorMohammadzadeh, A.
dc.date.accessioned2021-10-14T13:36:02Z
dc.date.available2021-10-14T13:36:02Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4673
dc.sourceIIOimport
dc.titleHigh-energy boron-implantation and proton-irradiation effects in diodes with shallow trench isolation
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage193
dc.source.endpage203
dc.source.conferenceProceedings 2nd ENDEASD Workshop
dc.source.conferencedate27/06/2000
dc.source.conferencelocationKista-Stockholm Sweden
imec.availabilityPublished - open access


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