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Impact of residual high-energy boron implantation induced p-well defects on shallow junctions

dc.contributor.authorPoyai, Amporn
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorRooyackers, Rita
dc.contributor.authorBadenes, Gonçal
dc.date.accessioned2021-10-14T13:36:11Z
dc.date.available2021-10-14T13:36:11Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4674
dc.sourceIIOimport
dc.titleImpact of residual high-energy boron implantation induced p-well defects on shallow junctions
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage129
dc.source.endpage135
dc.source.conferenceProceedings Semiconductor Advances for Future Electronics - SAFE
dc.source.conferencedate29/11/2000
dc.source.conferencelocationVeldhoven The Netherlands
imec.availabilityPublished - open access


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