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Properties of TiN thin films deposited by ALCVD as barriers for Cu metallization

dc.contributor.authorSatta, Alessandra
dc.contributor.authorBeyer, Gerald
dc.contributor.authorMaex, Karen
dc.contributor.authorElers, K.
dc.contributor.authorHaukka, S.
dc.contributor.authorVantomme, Andre
dc.date.accessioned2021-10-14T13:43:10Z
dc.date.available2021-10-14T13:43:10Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4721
dc.sourceIIOimport
dc.titleProperties of TiN thin films deposited by ALCVD as barriers for Cu metallization
dc.typeOral presentation
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.source.peerreviewno
dc.source.conferenceMRS Spring Meeting 2000. Symposium D: Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics
dc.source.conferencedate23/04/2000
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesD6.5


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