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Stress build-up during the Ni-silicidation in and around narrow silicide lines

dc.contributor.authorSteegen, An
dc.contributor.authorLauwers, Anne
dc.contributor.authorChamirian, Oxana
dc.contributor.authorBender, Hugo
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorDe Tavernier, C.
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-14T13:50:31Z
dc.date.available2021-10-14T13:50:31Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4769
dc.sourceIIOimport
dc.titleStress build-up during the Ni-silicidation in and around narrow silicide lines
dc.typeOral presentation
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.source.peerreviewno
dc.source.conferenceMRS Spring Meeting 2000. Symposium C: Gate Stack and Silicide Issues in Silicon Processing
dc.source.conferencedate24/04/2000
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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