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Electrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime

dc.contributor.authorYousif, M. Y. A.
dc.contributor.authorWillander, M.
dc.contributor.authorLundgren, P.
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-14T14:23:28Z
dc.date.available2021-10-14T14:23:28Z
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4965
dc.sourceIIOimport
dc.titleElectrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.source.peerreviewno
dc.source.beginpage277
dc.source.conferenceProceedings 8th Symposium on Microwave and Optoelectronic Applications High Performance Electron Devices; 13-14 November 2000; G
dc.source.conferencelocation
imec.availabilityPublished - imec


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