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Electrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime
Publication:
Electrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime
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Date
2000
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Yousif, M. Y. A.
;
Willander, M.
;
Lundgren, P.
;
Caymax, Matty
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1876
since deposited on 2021-10-14
1
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Acq. date: 2025-12-09
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Metrics
Views
1876
since deposited on 2021-10-14
1
last month
Acq. date: 2025-12-09
Citations