Publication:
Electrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime
Date
| dc.contributor.author | Yousif, M. Y. A. | |
| dc.contributor.author | Willander, M. | |
| dc.contributor.author | Lundgren, P. | |
| dc.contributor.author | Caymax, Matty | |
| dc.contributor.imecauthor | Caymax, Matty | |
| dc.date.accessioned | 2021-10-14T14:23:28Z | |
| dc.date.available | 2021-10-14T14:23:28Z | |
| dc.date.issued | 2000 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/4965 | |
| dc.source.beginpage | 277 | |
| dc.source.conference | Proceedings 8th Symposium on Microwave and Optoelectronic Applications High Performance Electron Devices; 13-14 November 2000; G | |
| dc.source.conferencelocation | ||
| dc.title | Electrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| Files | ||
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