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Electrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime
Publication:
Electrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime
Date
2000
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Yousif, M. Y. A.
;
Willander, M.
;
Lundgren, P.
;
Caymax, Matty
Journal
Abstract
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1874
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations
Metrics
Views
1874
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations