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Low-frequency noise and DC characterization of ionization damage in a 1-µm SOI CMOS technology adapted for space applications

dc.contributor.authorSimoen, Eddy
dc.contributor.authorMagnusson, Ulf
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorSmeys, Peter
dc.contributor.authorColinge, Jean-Pierre
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-09-29T12:55:38Z
dc.date.available2021-09-29T12:55:38Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/497
dc.sourceIIOimport
dc.titleLow-frequency noise and DC characterization of ionization damage in a 1-µm SOI CMOS technology adapted for space applications
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.source.peerreviewyes
dc.source.beginpage368
dc.source.endpage371
dc.source.conference2nd European Conference on Radiation and its Effects on Components and Systems - RADECS
dc.source.conferencedate13/09/1993
dc.source.conferencelocationSt. Malo France
imec.availabilityPublished - imec


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