Browsing Articles by author "Ikeda, Atsushi"
Now showing items 1-3 of 3
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Quantification of MOSFET device reliability with low-Vt lanthanum-incorporated high permittivity dielectrics
O'Sullivan, Barry; Aoulaiche, Marc; Cho, Moon Ju; Kauerauf, Thomas; Degraeve, Robin; Okawa, Hiroshi; Schram, Tom; Hoffmann, Thomas Y.; Groeseneken, Guido; Biesemans, Serge; Nakabayashi, Takashi; Ikeda, Atsushi; Niwa, Masaaki (2009) -
Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes
O'Sullivan, Barry; Mitsuhashi, Riichirou; Pourtois, Geoffrey; Aoulaiche, Marc; Houssa, Michel; Van der Heyden, Nikolaas; Schram, Tom; Harada, Yoshinao; Groeseneken, Guido; Absil, Philippe; Biesemans, Serge; Nakabayashi, Takashi; Ikeda, Atsushi; Niwa, Masaaki (2008) -
Work-function engineering for 32nm node pMOS devices: high-performance TaCNO-gated films
O'Sullivan, Barry; Mitsuhashi, Riichirou; Ito, Satoru; Oikawa, Kota; Kubicek, Stefan; Paraschiv, Vasile; Adelmann, Christoph; Veloso, Anabela; Yu, HongYu; Schram, Tom; Biesemans, Serge; Nakabayashi, Takashi; Ikeda, Atsushi; Niwa, Masaaki (2008)