Authors

O'Sullivan, Barry; Mitsuhashi, Riichirou; Pourtois, Geoffrey; Aoulaiche, Marc; Houssa, Michel; Van der Heyden, Nikolaas; Schram, Tom; Harada, Yoshinao; Groeseneken, Guido; Absil, Philippe; Biesemans, Serge; Nakabayashi, Takashi; Ikeda, Atsushi; Niwa, Masaaki

ISSN

0021-8979

Issue

4

Journal

Journal of Applied Physics

Volume

104

Title

Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes

Publication type

Journal article