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Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes

Date

2008
Journal article
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dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorHoussa, Michel
dc.contributor.authorVan der Heyden, Nikolaas
dc.contributor.authorSchram, Tom
dc.contributor.authorHarada, Yoshinao
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.authorNakabayashi, Takashi
dc.contributor.authorIkeda, Atsushi
dc.contributor.authorNiwa, Masaaki
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.accessioned2021-10-17T09:32:36Z
dc.date.available2021-10-17T09:32:36Z
dc.date.issued2008
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14259
dc.identifier.urlhttp://link.aip.org/link/?JAP/104/044512
dc.source.beginpage44500
dc.source.issue4
dc.source.journalJournal of Applied Physics
dc.source.volume104
dc.title

Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes

dc.typeJournal article
dspace.entity.typePublication
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