Publication:
Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes
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1950 since deposited on 2021-10-17
Acq. date: 2026-06-02
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Statistics
Views
1950 since deposited on 2021-10-17
Acq. date: 2026-06-02
Citations