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Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes
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1945 since deposited on 2021-10-17
Acq. date: 2025-10-23
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Views
1945 since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations