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Arsenic and phosphorus co-implantation for deep-submicron CMOS gate and source/drain engineering

dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorKubicek, Stefan
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorVan Laer, Joris
dc.contributor.authorBadenes, Gonçal
dc.date.accessioned2021-10-14T16:36:16Z
dc.date.available2021-10-14T16:36:16Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5018
dc.sourceIIOimport
dc.titleArsenic and phosphorus co-implantation for deep-submicron CMOS gate and source/drain engineering
dc.typeProceedings paper
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorVan Laer, Joris
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.source.peerreviewno
dc.source.beginpage115
dc.source.endpage118
dc.source.conferenceProceedings of the 31st European Solid-State Device Research Conference
dc.source.conferencedate11/09/2001
dc.source.conferencelocationNuremberg Germany
imec.availabilityPublished - imec


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