dc.contributor.author | Augendre, Emmanuel | |
dc.contributor.author | De Keersgieter, An | |
dc.contributor.author | Kubicek, Stefan | |
dc.contributor.author | Redolfi, Augusto | |
dc.contributor.author | Van Laer, Joris | |
dc.contributor.author | Badenes, Gonçal | |
dc.date.accessioned | 2021-10-14T16:36:16Z | |
dc.date.available | 2021-10-14T16:36:16Z | |
dc.date.issued | 2001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/5018 | |
dc.source | IIOimport | |
dc.title | Arsenic and phosphorus co-implantation for deep-submicron CMOS gate and source/drain engineering | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | De Keersgieter, An | |
dc.contributor.imecauthor | Kubicek, Stefan | |
dc.contributor.imecauthor | Redolfi, Augusto | |
dc.contributor.imecauthor | Van Laer, Joris | |
dc.contributor.orcidimec | De Keersgieter, An::0000-0002-5527-8582 | |
dc.source.peerreview | no | |
dc.source.beginpage | 115 | |
dc.source.endpage | 118 | |
dc.source.conference | Proceedings of the 31st European Solid-State Device Research Conference | |
dc.source.conferencedate | 11/09/2001 | |
dc.source.conferencelocation | Nuremberg Germany | |
imec.availability | Published - imec | |