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Influence of CH4/H2 reactive ion etching on the electrical and optical properties of AlGaAs/GaAs/InGaAs/GaAs heterostructures

dc.contributor.authorvan Es, C. M.
dc.contributor.authorEijkemans, T. J.
dc.contributor.authorWolter, J. H.
dc.contributor.authorPereira, Ricardo
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorVan Rossum, Marc
dc.date.accessioned2021-09-29T13:04:09Z
dc.date.available2021-09-29T13:04:09Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/501
dc.sourceIIOimport
dc.titleInfluence of CH4/H2 reactive ion etching on the electrical and optical properties of AlGaAs/GaAs/InGaAs/GaAs heterostructures
dc.typeProceedings paper
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage307
dc.source.endpage312
dc.source.conferenceCompound Semiconductors 1994. Proceedings of the 21st International Symposium
dc.source.conferencedate18/09/1994
dc.source.conferencelocationSan Diego, CA USA
imec.availabilityPublished - open access
imec.internalnotesIOP Conference Series; Vol. 141


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