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Using adaptive resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors

dc.contributor.authorBakeroot, Benoit
dc.contributor.authorMoens, P.
dc.contributor.authorVermandel, Miguel
dc.contributor.authorDoutreloigne, Jan
dc.date.accessioned2021-10-14T16:36:34Z
dc.date.available2021-10-14T16:36:34Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5033
dc.sourceIIOimport
dc.titleUsing adaptive resurf technique and field plate working to improve the safe operating area of n-type drain extended MOS transistors
dc.typeProceedings paper
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDoutreloigne, Jan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.source.peerreviewno
dc.source.beginpage498
dc.source.endpage501
dc.source.conferenceProceedings of MSM; March 2001; South Carolina, USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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