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Progress towards an electrically active, ultra-shallow junction depth reference for carrier illumination, SRP and SIMS

dc.contributor.authorBorden, P.
dc.contributor.authorBechtler, L.
dc.contributor.authorKlemme, B.
dc.contributor.authorNijmeijer, R.
dc.contributor.authorJudge, E.
dc.contributor.authorDiebold, A.
dc.contributor.authorBennett, J.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClarysse, Trudo
dc.contributor.authorCaymax, Matty
dc.contributor.authorPeytier, Ivan
dc.date.accessioned2021-10-14T16:38:20Z
dc.date.available2021-10-14T16:38:20Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5083
dc.sourceIIOimport
dc.titleProgress towards an electrically active, ultra-shallow junction depth reference for carrier illumination, SRP and SIMS
dc.typeProceedings paper
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage161
dc.source.endpage167
dc.source.conference6th Int. Workshop on Fabrication, Characterization and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - USJ
dc.source.conferencedate22/04/2001
dc.source.conferencelocationNapa, CA USA
imec.availabilityPublished - open access


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