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Electrical characterization of high-k materials prepared by Atomic Layer CVD (ALCVD)

dc.contributor.authorCarter, Richard
dc.contributor.authorCartier, Eduard
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorKerber, Andreas
dc.contributor.authorKubicek, Stefan
dc.contributor.authorLujan, Guilherme
dc.contributor.authorPantisano, Luigi
dc.contributor.authorTsai, Wilman
dc.contributor.authorYoung, Edward
dc.date.accessioned2021-10-14T16:40:40Z
dc.date.available2021-10-14T16:40:40Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5125
dc.sourceIIOimport
dc.titleElectrical characterization of high-k materials prepared by Atomic Layer CVD (ALCVD)
dc.typeProceedings paper
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage94
dc.source.endpage99
dc.source.conferenceExtended Abstracts of the International Workshop on Gate Insulator. IWGI 2001; 1-2 November 2001; Tokyo, Japan.
dc.source.conferencelocation
imec.availabilityPublished - imec


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