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Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition

dc.contributor.authorCosnier, Vincent
dc.contributor.authorBender, Hugo
dc.contributor.authorCaymax, Matty
dc.contributor.authorChen, Jian
dc.contributor.authorConard, Thierry
dc.contributor.authorNohira, Hiroshi
dc.contributor.authorRichard, Olivier
dc.contributor.authorTsai, Wilman
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorYoung, Edward
dc.contributor.authorZhao, Chao
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorMaes, Jos
dc.contributor.authorTuominen, Marko
dc.contributor.authorRochat, N.
dc.contributor.authorOlivier, M.
dc.contributor.authorChabli, A.
dc.date.accessioned2021-10-14T16:43:58Z
dc.date.available2021-10-14T16:43:58Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5171
dc.sourceIIOimport
dc.titleInfrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage226
dc.source.endpage229
dc.source.conferenceExtended Abstracts of the International Workshop on Gate Insulator - IWGI
dc.source.conferencedate1/11/2001
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - imec


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