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Minority carrier diffusion lengths in silicon doped gallium nitride thin films measured by electron beam induced current

dc.contributor.authorGrazzi, C.
dc.contributor.authorAlbrecht, M.
dc.contributor.authorStrunk, H. P.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorMoerman, Ingrid
dc.date.accessioned2021-10-14T16:59:07Z
dc.date.available2021-10-14T16:59:07Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5320
dc.sourceIIOimport
dc.titleMinority carrier diffusion lengths in silicon doped gallium nitride thin films measured by electron beam induced current
dc.typeProceedings paper
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.source.peerreviewno
dc.source.conferenceGADEST 2001 - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology;
dc.source.conferencelocation
imec.availabilityPublished - imec


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