Publication:
Ultrathin (< 4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: understanding the processing, structure, and physical and electrical limits
Date
Loading...
Journal
Abstract
Description
Metrics
Views
1953 since deposited on 2021-10-14
1last month
1last week
Acq. date: 2026-01-12
Citations
Metrics
Views
1953 since deposited on 2021-10-14
1last month
1last week
Acq. date: 2026-01-12
Citations