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EFTEM study of plasma etched low-k Si-O-C dielectrics

dc.contributor.authorHens, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorDonaton, R. A.
dc.contributor.authorMaex, Karen
dc.contributor.authorVanhaelemeersch, Serge
dc.contributor.authorVan Landuyt, J.
dc.date.accessioned2021-10-14T17:01:24Z
dc.date.available2021-10-14T17:01:24Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5338
dc.sourceIIOimport
dc.titleEFTEM study of plasma etched low-k Si-O-C dielectrics
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.source.peerreviewno
dc.source.beginpage415
dc.source.endpage418
dc.source.conferenceMicroscopy of Semiconducting Materials - MSMXII
dc.source.conferencedate25/03/2001
dc.source.conferencelocationOxford UK
imec.availabilityPublished - imec
imec.internalnotesIOP Conference Series; Vol. 169


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