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Effect of implant oxide on ultra-shallow junction formation

dc.contributor.authorLindsay, Richard
dc.contributor.authorLauwers, Anne
dc.contributor.authorFruehauf, Jens
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-14T17:16:12Z
dc.date.available2021-10-14T17:16:12Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5448
dc.sourceIIOimport
dc.titleEffect of implant oxide on ultra-shallow junction formation
dc.typeProceedings paper
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorMaex, Karen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage255
dc.source.endpage260
dc.source.conference6th Int. Workshop on Fabrication, Characterization and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - USJ
dc.source.conferencedate22/04/2001
dc.source.conferencelocationNapa, CA USA
imec.availabilityPublished - open access


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