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Ge island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactor

dc.contributor.authorLoo, Roger
dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorDentel, D.
dc.contributor.authorGoryll, M.
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorVescan, L.
dc.contributor.authorBender, Hugo
dc.contributor.authorCaymax, Matty
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-14T17:16:55Z
dc.date.available2021-10-14T17:16:55Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5453
dc.sourceIIOimport
dc.titleGe island evolution during growth, in-situ anneal, and Si capping in an industrial CVD reactor
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.source.peerreviewno
dc.source.beginpageA8.8.1
dc.source.endpageA8.8.6
dc.source.conferenceAmorphous and Heterogeneous Silicon-Based Films
dc.source.conferencedate16/04/2001
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMaterials Research Society Symposium Proceedings; Vol. 664


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